? 2004 ixys all rights reserved to-247 ad g = gate, d = drain, s = source, tab = drain d (tab) symbol test conditions maximum ratings v dss t j = 25 c to 150 c -200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? -200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c -24 a i dm t c = 25 c, pulse width limited by t j -96 a i ar t c = 25 c -24 a e ar t c = 25 c30mj p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 400 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque 1.13/10 nm/lb.in. weight 6g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = -250 a -200 v v gs(th) v ds = v gs , i d = -250 a -3.0 -5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j =25 c -25 a v gs = 0 v t j = 125 c-1ma r ds(on) v gs = -10 v, i d = 0.5 ? i d25 0.11 ? features ? international standard package jedec to-247 ad ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance (<5 nh) - easy to drive and to protect applications ? high side switching ? push-pull amplifiers ? dc choppers ? automatic test equipment advantages ? easy to mount with 1 screw (isolated mounting screw hole) ? space savings ? high power density ds98769f(12/04) p-channel enhancement mode avalanche rated standard power mosfet ixth 24p20 v dss = - 200 v i d25 = - 24 a r ds(on) 0.11 ?? ?? ?
ixys reserves the right to change limits, test conditions, and dimensions. ixth 24p20 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10 v; i d = i d25 , pulse test 10 15 s c iss 4200 pf c oss v gs = 0 v, v ds = -25 v, f = 1 mhz 830 pf c rss 350 pf t d(on) 36 ns t r v gs = -10 v, v ds = 0.5 v dss , i d = 0.5 i d25 29 ns t d(off) r g = 4.7 ? (external) 68 ns t f 28 ns q g(on) 150 nc q gs v gs = -10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 nc q gd 70 nc r thjc 0.42 k/w r thcs 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 -24 a i sm repetitive; pulse width limited by t jm -96 a v sd i f = i s , v gs = 0 v, -3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , di/dt = 100 a/ s, v r = -50 v 250 ns ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463
? 2004 ixys all rights reserved fig. 1. output characte ristics @ 25oc -35 -30 -25 -20 -15 -10 -5 0 -8 -7 -6 -5 -4 -3 -2 -1 0 v d s - volts i d - amperes v gs = -10v -9v -8v -6v -7v fig. 3. r ds(on) norm alized to i d25 v alue vs . junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s (on) - normalized i d = -24a i d = -12a v gs = -10v fig. 6. input admittance -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 -8 -7.5 -7 -6.5 -6 -5.5 -5 -4.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 5. drain current vs. case temperature -27 -24 -21 -18 -15 -12 -9 -6 -3 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 4. r ds(on) norm alized to i d25 value vs . i d 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 -35 -30 -25 -20 -15 -10 -5 0 i d - amperes r d s (on) - normalized t j = 125oc t j = 25oc v gs = -10v fig. 2. output characte ristics @ 125oc -35 -30 -25 -20 -15 -10 -5 0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 v d s - volts i d - amperes v gs = -10v -9v -5v -6v -7v -8v ixth 24p20
ixys reserves the right to change limits, test conditions, and dimensions. ixth 24p20 fig. 9. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v g s - volts v ds = -100v i d = -12a i g = -1ma fig. 7. transconductance 0 3 6 9 12 15 18 21 24 -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 8. source current vs. source-to-drain voltage -80 -70 -60 -50 -40 -30 -20 -10 0 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. for w ar d-bias saf e operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t c = 25oc t j = 150oc r ds(on) limit 10ms fig. 11. capacitance 100 1000 10000 -40 -35 -30 -25 -20 -15 -10 -5 0 v d s - volts capacitance - pf c iss c oss c rss f = 1mhz fig. 10. temperature dependence of breakdow n and threshole voltage 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv d s s & v g s (t h) - normalize d v gs(th) bv dss
? 2004 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) ixth 24p20
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